The research and application of ultra-wide bandgap semiconductor materials (forbidden band width > 4.5 e V) represented by diamond, gallium oxide, aluminum nitride, boron nitride, etc., have continuously obtained technological breakthroughs in recent years. Such semiconductor materials have higher band gap, thermal conductivity and material stability, and have significant advantages and great development potential in the fields of new generation deep ultraviolet optoelectronic devices, high voltage and high power electronic devices, and are now becoming international competition. New hotspots.

As a member of ultra-wide bandgap semiconductor materials (band gap width 5.5 e V), diamond has excellent physical and chemical properties such as high carrier mobility, high thermal conductivity, high breakdown electric field, high carrier saturation rate. And low dielectric constant, etc., the following is a comparison of related parameters. Based on these excellent performance parameters, diamond is considered to be the most promising material for the next generation of high-power, high-frequency, high-temperature and low-power loss electronic devices, and is known as the "ultimate semiconductor" in the industry.